Review of ferroelectric field‐effect transistors for
The ferroelectric field-effect transistor (FeFET) is one of the leading contenders to succeed charge-trap-based flash memory (CTF) devices in the current vertically-integrated NAND flash storage market.
Nanowell field-effect transistor for highly sensitive molecular
More specifically, imec is researching the modification of traditional metal oxide semiconductor field-effect transistors (MOSFETs) into liquid-gated field-effect transistors. The
Ion-confined transport supercapacitors: The encounter with energy
Later, the first ion-based field-effect transistor (1970), electrolyte-gated transistor (1990), and ionic logic circuits using ions as information carriers it becomes possible to
Ion-Sensitive Field-Effect Transistor for Biological Sensing
In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the
Progress on a Carbon Nanotube Field-Effect
As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is considered to be the most significant transistor
Field-Effect Transistor (FET): Characteristics,
There are two types of FET: JFET (Junction Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). 1. JFET. A JFET is characterized by a junction between the gate and the
Two-Dimensional Semiconductors for State-of-the-Art
As the trajectory of transistor scaling defined by Moore''s law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to
Dirac-source field-effect transistors as energy-efficient,
An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts per decade, in field
Polymeric Charge Storage Electrets for Nonvolatile Organic Field Effect
Flexible organic field-effect-transistor (OFET) memory is one of the promising candidates for next-generation wearable nonvolatile data storage due to its low price, solution
Electrical characterization of 2D materials-based field
Electrical characterization of 2D materials-based field-effect transistors, Sekhar Babu Mitta, Min Sup Choi, Ankur Nipane, Fida Ali, Changsik Kim, James T Teherani, James Hone, Won Jong Yoo and energy storage
Ferroelectric field effect transistors for electronics and
A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor,
Silicene field-effect transistors operating at room temperature
A process for the growth, transfer and fabrication of silicene field-effect transistors enables devices that have mobility of about 100 cm2 V−1 s–1. Free-standing silicene, a silicon
Logic-in-memory application of ferroelectric-based WS2-channel field
In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for
Improvement in electronic attributes of tungsten diselenide (WSe2
Based on its performance, it has significant usage in sensing devices, energy storage devices, photovoltaics, and field-effect transistors [27, 28]. However, loss of transport
High-performance single-crystalline In2O3 field effect transistor
Vertical field-effect transistors using the single-crystalline In2O3 had an off-state current of 10−21 A μm−1 and electrical characteristics were improved compared with those
Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and
Ferroelectric (FE) memories, such as FE field-effect transistors and FE random access memories, show great promise in meeting these requirements. Another key factor is
Ferroelectric field effect transistors: Progress and
Recently, a ferroelectric semiconductor-field effect transistor (FeS-FET) using a ferroelectric material as a semiconductor layer has been developed. Unlike conventional FeFETs, there is a mobile charge screening