Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible
In this study, epitaxial antiferroelectric PbHfO 3 films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy storage properties
Surface plasma treatment boosting antiferroelectricity and energy
The utilization of AgNbO 3 film in dielectric energy storage poses challenges due to its susceptibility to impurity phase formation, which compromises its antiferroelectric
Lead-free Nb-based dielectric film capacitors for energy storage
Here, we provide an overview of the state-of-the-art lead-free Nb-based films for energy storage applications, which include K0.5Na0.5NbO3-based, K0.5Na0.5Bi4NbTi3O15-based, AgNbO3
Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric
Benefitting from the reversible phase transition between antiferroelectric and ferroelectric states, antiferroelectric materials have recently received widespread attentions for
Dielectric, energy storage, and loss study of antiferroelectric-like
Antiferroelectric thin films have properties ideal for energy storage due to their lower losses compared to their ferroelectric counterparts as well as their robust endurance
Dielectric, energy storage, and loss study of antiferroelectric-like
Energy storage density (ESD) values are regularly assessed for AFE and AFE-like, FE, and dielectric (DE) thin films. The reason for the "AFE-like" nomenclature in this work
PbZrO3-based thin film capacitors with high energy
1 天前· Antiferroelectric (Pb 0.87 Sr 0.05 Ba 0.05 La 0.02)(Zr 0.52 Sn 0.40 Ti 0.08)O 3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100)
Tailoring switching field of phase transition for enhancing energy
In this paper, Pb 0.98 La 0.02 (Zr 0.55 Sn 0.45-x Ti x) 0.995 O 3 (x = 0.02–0.08) (PLZST) antiferroelectric (AFE) thick films were fabricated by a unique technology of the rolling
Energy storage performance and piezoelectric response of silver
AgNbO 3-based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always
Antiferroelectric Si:HfO2 for High Energy Storage using 3D MIM
Doped hafnium oxide films show good antiferroelectric (AFE) like properties that can be used for energy storage devices. In this paper, we propose the use of AFE silicon doped HfO 2 on a 3D
PbZrO3-based thin film capacitors with high energy storage
1 天前· Antiferroelectric (Pb 0.87 Sr 0.05 Ba 0.05 La 0.02)(Zr 0.52 Sn 0.40 Ti 0.08)O 3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality
Self-polarization and energy storage performance in antiferroelectric
The values of recoverable energy storage density of 32.6 J/cm 3 and efficiency of 88.1% are obtained for trilayer films annealed at 550 °C, meaning that the design of
Antiferroelectrics for Energy Storage Applications: a Review
been devoted to the development of high performance, antiferroelectric, energy storage ceramics and much progress has been achieved. In this review, the current state-of-the-art as regards
6 FAQs about [Antiferroelectric energy storage film]
Are antiferroelectric materials suitable for energy storage applications?
Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO 3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates.
Can PZ-based anti-ferroelectric thin films be used for electrical energy storage?
During the past decade, numerous studies have been reported to develop high-performance PZ-based anti-ferroelectric thin films for electrical energy storage applications.
What are pbzro 3 based anti-ferroelectric films?
Compared with the lead-free anti-ferroelectric materials, PbZrO 3 (PZ)-based anti-ferroelectric films are defined as promising electrical energy storage devices for pulsed power systems due to their ultrahigh energy storage density.
Are antiferroelectric oxides a multifunctional material?
Antiferroelectric (AFE) oxides are multifunctional materials that have attracted much attention due to their unique field-induced phase transition 7, 8. The field-induced strain could reach 1.1% during the AFE-FE phase transition 9, much larger than the piezoelectric strain in most of the ferroelectric materials.
Are antiferroelectric ceramics tunable domain switching?
Ge, G. et al. Tunable domain switching features of incommensurate antiferroelectric ceramics realizing excellent energy storage properties. Adv. Mater. 34, e2201333 (2022). Wang, T. et al. Giant energy storage of flexible composites by embedding superparaelectric single-crystal membranes. Nano Energy 113, 108511 (2023).
Do all-inorganic flexible films have energy storage properties?
Cite this: ACS Appl. Mater. Interfaces 2022, 14, 25, 28997–29006 With the increasingly high requirements for wearable and flexible devices, traditional inorganic capacitors cannot meet the flexible demand of next-generation electronic devices. In this work, the energy storage property of all-inorganic flexible films has been systematically studied.